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FeMOS

FeMOS

FeMOS is a finite element simulator to solve Poisson-NEGF equation. It handles floating boundary conditions at the source and the drain of ballistic device. The discretization is done using linear piecewise finite element.


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Ver. Link Size Date Changes
1.0 femos-1.0.tar.gz 642K 2008-10-01 First public release of FeMOS
1.1 femos-1.1.tar.gz 2MB 2008-11-24 Add and modified file funSchro1DTrans_eigs.m to test eigenfem1d C++ file (still buggy).
Enable debug when there is error or warning in femos_eigtest.m.
Combine if-else in funbuildKJacob2d.m for myden1 and myden2.
Omit variable Vdlist in femos.m.
Use trapz to integrate current in femos.m.
Use eigs from ARPACK in eigenfem1dvec.m.
changed ofinvhalfh.m to finvhalf.oct.
port getvalmid1d.m to getvalmid1d.oct.
port getvalcentroid2d.m to getvalcentroid2d.oct.
2 femos-2.0.tar.gz 2.5MB 2009-12-14 Refer to this article for the details.
Octave

FeMOS SVN

svn checkout svn://opensource.ihpc.a-star.edu.sg/FeMOS/trunk FeMOS


*If you wish to participate in FeMOS development, please contact the project maintainer.*

Description


Most of the semiconductor device simulator use finite difference to discretize the domain. For ballistic device, it is necessary to satisfy the floating boundary condition at the source and drain to maintain charge neutrality. In finite element, this boundary condition is satisfied automatically and implicitly. The simulator use the Non-equilibrium Green's function (NEGF) technique to solve the transport equation. In this framework, the electron is considered from the quantum mechanical perspective. The Green's function matrices provides the necessary informatin to obtain the charge density, current, density of states, transmission function, etc. The simulator solves the Poisson equation and the Non-equilibrium Green's function self-consistently.

The code is written in Octave scripting language. Octave is a free high-level language for numerical calculation. To run the code, Octave version 3.0.1 or higher is required. Please refer to the user guide for detailed information.

Femos Fig 1

Fig 1: Double-gate MOSFET device structure.



Femos Fig 2

Fig 2: Self-potential of double-gate MOSFET in zero bias.


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